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Retention time in multiple-tunnel junction memory device.
- Source :
-
Journal of Applied Physics . 1/15/1999, Vol. 85 Issue 2, p1203. 8p. 2 Diagrams, 6 Graphs. - Publication Year :
- 1999
-
Abstract
- Presents information on a study which calculated the retention time of charges stored on a memory node of a multiple-tunnel junction (MTJ) memory device using a computationaly inexpensive approximation. Basic equations for MTJ; Cotunneling contribution of the current; Retention time in actual memory circuit; Conclusions.
- Subjects :
- *FERROELECTRIC RAM
*FERROELECTRIC devices
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 85
- Issue :
- 2
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 1494535
- Full Text :
- https://doi.org/10.1063/1.369246