Nano‐power tunable bump circuit using wide‐input‐range pseudo‐differential transconductor.

An ultra‐low‐power tunable bump circuit is presented. It incorporates a novel wide‐input‐range tunable pseudo‐differential transconductor linearised using the drain resistances of saturated transistors. Measurement results show that the transconductor has a 5 V differential input range with <20% of linearity error. The bump circuit demonstrates tunability of the centre, width and height, consuming 18.9 nW power from a 3 V supply, occupying 988 μm2 in a 0.13 μm CMOS process. [ABSTRACT FROM AUTHOR]