Improvement of conversion efficiency for solar cell with metal–oxide‐semiconductor diode.

The novel structure of a solar cell is presented that has the metal–oxide‐semiconductor diode at the side wall of the power generation layer. The influence of the field‐effect on the recombination of carriers is simulated and the increase of the conversion efficiency of the solar cell by the gate voltage application is discussed. In addition, the relationship between the effect of the gate voltage application on the conversion efficiency, the lifetime and the surface recombination velocity is discussed. [ABSTRACT FROM AUTHOR]