Effect of high bandgap AlAs quantum barrier on electronic and optical properties of In0.70Ga0.30As/Al0.60In0.40As superlattice under applied electric field for laser and detector applications.

Effect of high bandgap 0. 5  nm AlAs on the electronic and optical properties of the In 0. 7 0 Ga 0. 3 0 As / Al 0. 6 0 In 0. 4 0 As superlattice is investigated by using effective mass approximation under the electric field. Electronic transitions are obtained as 0.403 eV and 0.023 eV for E 3 2 and E 2 1 in the gain region. Thin AlAs increases electron confinement in the superlattice and prevents electron leakage in the gain region which mostly results in higher absorption/emission in the superlattice. AlAs has no major effects on transitions energies in the gain region but it is effectively decreasing the total absorption in the injector region and preventing the internal absorption. AlAs also makes the superlattice optically more stable by decreasing the high refractive index change in the injector region by factor 5. [ABSTRACT FROM AUTHOR]