Secondary Silicon Carbide Formed in the Interaction of Nanosized Silicon Carbide with Iron Oxide.

The characteristics of superfine powder composites formed in the interaction of nanosized silicon carbide with iron oxide in vacuum and argon at 1200 and 1400°C, respectively, are analyzed. Silicon carbide (β-SiC), iron silicide and carbide, silicon oxide, and silicon oxynitride are main components of the powder composites. The lattice parameter of SiC in the powder composites synthesized in the SiC–Fe2O3 system is determined. In the interaction in the SiC–Fe2O3 powder mixture in vacuum, secondary SiC is synthesized with a lattice parameter that corresponds to the standard parameter for cubic β-SiC. The interaction in an argon atmosphere is accompanied by the synthesis of secondary SiC with a decreased lattice parameter. The minimum lattice parameter (0.4336 nm) is 0.6% smaller than the standard parameter for cubic β-SiC. The morphology of the powder composite synthesized in the SiC–Fe2O3 system is studied. The average particle size of the powder composite decreases with increasing weight content of secondary SiC. [ABSTRACT FROM AUTHOR]