Static and Dynamic Performance Prediction of Ultrahigh-Voltage Silicon Carbide Insulated-Gate Bipolar Transistors.

MLA

Johannesson, Daniel, et al. “Static and Dynamic Performance Prediction of Ultrahigh-Voltage Silicon Carbide Insulated-Gate Bipolar Transistors.” IEEE Transactions on Power Electronics, vol. 36, no. 5, May 2021, pp. 5874–91. EBSCOhost, https://doi.org/10.1109/TPEL.2020.3027370.

APA

Johannesson, D., Nawaz, M., Norrga, S., Hallen, A., & Nee, H.-P. (2021). Static and Dynamic Performance Prediction of Ultrahigh-Voltage Silicon Carbide Insulated-Gate Bipolar Transistors. IEEE Transactions on Power Electronics, 36(5), 5874–5891. https://doi.org/10.1109/TPEL.2020.3027370

Chicago

Johannesson, Daniel, Muhammad Nawaz, Staffan Norrga, Anders Hallen, and Hans-Peter Nee. 2021. “Static and Dynamic Performance Prediction of Ultrahigh-Voltage Silicon Carbide Insulated-Gate Bipolar Transistors.” IEEE Transactions on Power Electronics 36 (5): 5874–91. doi:10.1109/TPEL.2020.3027370.