Investigation of β-Ga2O3 thin films grown on epi-GaN/sapphire(0001) substrates by low pressure MOCVD.

In this paper,β-Ga 2 O 3 films were grown on epi-GaN/sapphire (0001) substrates at 600,700 and 800 °C by low pressure MOCVD, respectively.And the influences of temperature on the crystal structure, surface morphology and element chemical state were investigated.XRD analysis found that β-Ga 2 O 3 films were preferentially grown along the (−201) crystal plane, and crystal quality of the films improved with increasing temperature.AFM and SEM indicated that the surface morphology of films was obviously changed with the increasing temperature, and the surface became compact and flat.The FWHM value of XRD rocking curve at 800 °C less than those grown at 600 and 700 °C, indicating that the β-Ga 2 O 3 film grown at 800 °C has better crystal quality.XPS showed that the intensity of the Ga 2p, Ga 3d and O 1s peaks increased with temperature, and epitaxial relationship of β-Ga 2 O 3 was confirmed by HRTEM, consistent with the XRD results. • β-Ga 2 O 3 films were grown on epi-GaN/sapphire (0001) substrates by low-pressure MOCVD. • β-Ga 2 O 3 films wwere preferentially grown along the (−201) direction. • The surface morphology and crystal quality changed significantly with increasing temperature. • XPS indicated that the intensity of the Ga 2p, Ga 3d and O 1s peaks increased with increasing temperature. • The Raman analysis detected low-frequency and intermediate-frequency Raman vibration mode of β-Ga 2 O 3. [ABSTRACT FROM AUTHOR]