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Erratum: Physical modelling and experimental characterisation of InAlAs/InGaAs avalanche photodiode for 10 Gb/s data rates and higher.
- Source :
-
IET Optoelectronics (Wiley-Blackwell) . Feb2018, Vol. 12 Issue 1, p55-55. 1p. - Publication Year :
- 2018
Details
- Language :
- English
- ISSN :
- 17518768
- Volume :
- 12
- Issue :
- 1
- Database :
- Academic Search Index
- Journal :
- IET Optoelectronics (Wiley-Blackwell)
- Publication Type :
- Academic Journal
- Accession number :
- 148066515
- Full Text :
- https://doi.org/10.1049/iet-opt.2017.0140