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Investigation of the electrical conduction mechanisms in P-type amorphous germanium electrical contacts for germanium detectors in searching for rare-event physics.
- Source :
-
European Physical Journal C -- Particles & Fields . Oct2020, Vol. 80 Issue 10, p1-27. 27p. - Publication Year :
- 2020
-
Abstract
- For the first time, electrical conduction mechanisms in the disordered material system is experimentally studied for p-type amorphous germanium (a-Ge) used for high-purity Ge detector contacts. The localization length and the hopping parameters in a-Ge are determined using the surface leakage current measured from three high-purity planar Ge detectors. The temperature dependent hopping distance and hopping energy are obtained for a-Ge fabricated as the electrical contact materials for high-purity Ge planar detectors. As a result, we find that the hopping energy in a-Ge increases as temperature increases while the hopping distance in a-Ge decreases as temperature increases. The localization length of a-Ge is on the order of 2. 13 + 0.07 - 0.05 A ∘ to 5. 07 + 2.58 - 0.83 A ∘ , depending on the density of states near the Fermi energy level within bandgap. Using these parameters, we predict that the surface leakage current from a Ge detector with a-Ge contacts can be much smaller than one yocto amp (yA) at helium temperature, suitable for rare-event physics searches. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 14346044
- Volume :
- 80
- Issue :
- 10
- Database :
- Academic Search Index
- Journal :
- European Physical Journal C -- Particles & Fields
- Publication Type :
- Academic Journal
- Accession number :
- 147744292
- Full Text :
- https://doi.org/10.1140/epjc/s10052-020-08529-z