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Effectiveness of selective area growth using van der Waals h-BN layer for crack-free transfer of large-size III-N devices onto arbitrary substrates.

Authors :
Karrakchou, Soufiane
Sundaram, Suresh
Ayari, Taha
Mballo, Adama
Vuong, Phuong
Srivastava, Ashutosh
Gujrati, Rajat
Ahaitouf, Ali
Patriarche, Gilles
Leichlé, Thierry
Gautier, Simon
Moudakir, Tarik
Voss, Paul L.
Salvestrini, Jean Paul
Ougazzaden, Abdallah
Source :
Scientific Reports. 12/10/2020, Vol. 10 Issue 1, p1-9. 9p.
Publication Year :
2020

Abstract

Selective Area van der Waals Epitaxy (SAVWE) of III-Nitride device has been proposed recently by our group as an enabling solution for h-BN-based device transfer. By using a patterned dielectric mask with openings slightly larger than device sizes, pick-and-place of discrete LEDs onto flexible substrates was achieved. A more detailed study is needed to understand the effect of this selective area growth on material quality, device performance and device transfer. Here we present a study performed on two types of LEDs (those grown on h-BN on patterned and unpatterned sapphire) from the epitaxial growth to device performance and thermal dissipation measurements before and after transfer. Millimeter-size LEDs were transferred to aluminum tape and to silicon substrates by van der Waals liquid capillary bonding. It is shown that patterned samples lead to a better material quality as well as improved electrical and optical device performances. In addition, patterned structures allowed for a much better transfer yield to silicon substrates than unpatterned structures. We demonstrate that SAVWE, combined with either transfer processes to soft or rigid substrates, offers an efficient, robust and low-cost heterogenous integration capability of large-size devices to silicon for photonic and electronic applications. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
20452322
Volume :
10
Issue :
1
Database :
Academic Search Index
Journal :
Scientific Reports
Publication Type :
Academic Journal
Accession number :
147529198
Full Text :
https://doi.org/10.1038/s41598-020-77681-z