Cite
Novel Speed-and-Power-Optimized SRAM Cell Designs With Enhanced Self-Recoverability From Single- and Double-Node Upsets.
MLA
Yan, Aibin, et al. “Novel Speed-and-Power-Optimized SRAM Cell Designs With Enhanced Self-Recoverability From Single- and Double-Node Upsets.” IEEE Transactions on Circuits & Systems. Part I: Regular Papers, vol. 67, no. 12, Dec. 2020, pp. 4684–95. EBSCOhost, https://doi.org/10.1109/TCSI.2020.3018328.
APA
Yan, A., Chen, Y., Hu, Y., Zhou, J., Ni, T., Cui, J., Girard, P., & Wen, X. (2020). Novel Speed-and-Power-Optimized SRAM Cell Designs With Enhanced Self-Recoverability From Single- and Double-Node Upsets. IEEE Transactions on Circuits & Systems. Part I: Regular Papers, 67(12), 4684–4695. https://doi.org/10.1109/TCSI.2020.3018328
Chicago
Yan, Aibin, Yan Chen, Yuanjie Hu, Jun Zhou, Tianming Ni, Jie Cui, Patrick Girard, and Xiaoqing Wen. 2020. “Novel Speed-and-Power-Optimized SRAM Cell Designs With Enhanced Self-Recoverability From Single- and Double-Node Upsets.” IEEE Transactions on Circuits & Systems. Part I: Regular Papers 67 (12): 4684–95. doi:10.1109/TCSI.2020.3018328.