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Spatial and Hyperfine Characteristics of SiV– and SiV0 Color Centers in Diamond: DFT Simulation.

Authors :
Nizovtsev, A. P.
Kilin, S. Ya.
Pushkarchuk, A. L.
Kuten, S. A.
Poklonski, N. A.
Michels, D.
Lyakhov, D.
Jelezko, F.
Source :
Semiconductors. 2020, Vol. 54 Issue 12, p1685-1688. 4p.
Publication Year :
2020

Abstract

One of the most promising platforms to implement quantum technologies are coupled electron-nuclear spins in diamond in which the electrons of paramagnetic color centers play a role of "fast" qubits, while nuclear spins of nearby 13C atoms can store quantum information for a very long time due to their exceptionally high isolation from the environment. Essential prerequisite for a high-fidelity spin manipulation in these systems with tailored control pulse sequences is a complete knowledge of hyperfine interactions. Development of this understanding for the negatively charged "silicon-vacancy" (SiV–) and neutral (SiV0) color center, is a primary goal of this article, where we are presenting shortly our recent results of computer simulation of spatial and hyperfine characteristics of these SiV centers in H-terminated cluster C128[SiV]H98 along with their comparison with available experimental data. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
10637826
Volume :
54
Issue :
12
Database :
Academic Search Index
Journal :
Semiconductors
Publication Type :
Academic Journal
Accession number :
147387393
Full Text :
https://doi.org/10.1134/S1063782620120271