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Spatial and Hyperfine Characteristics of SiV– and SiV0 Color Centers in Diamond: DFT Simulation.
- Source :
-
Semiconductors . 2020, Vol. 54 Issue 12, p1685-1688. 4p. - Publication Year :
- 2020
-
Abstract
- One of the most promising platforms to implement quantum technologies are coupled electron-nuclear spins in diamond in which the electrons of paramagnetic color centers play a role of "fast" qubits, while nuclear spins of nearby 13C atoms can store quantum information for a very long time due to their exceptionally high isolation from the environment. Essential prerequisite for a high-fidelity spin manipulation in these systems with tailored control pulse sequences is a complete knowledge of hyperfine interactions. Development of this understanding for the negatively charged "silicon-vacancy" (SiV–) and neutral (SiV0) color center, is a primary goal of this article, where we are presenting shortly our recent results of computer simulation of spatial and hyperfine characteristics of these SiV centers in H-terminated cluster C128[SiV]H98 along with their comparison with available experimental data. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 10637826
- Volume :
- 54
- Issue :
- 12
- Database :
- Academic Search Index
- Journal :
- Semiconductors
- Publication Type :
- Academic Journal
- Accession number :
- 147387393
- Full Text :
- https://doi.org/10.1134/S1063782620120271