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Efficiency Droop Suppression and Light Output Power Enhancement of Deep Ultraviolet Light-Emitting Diode by Incorporating Inverted-V-Shaped Quantum Barriers.
- Source :
-
IEEE Transactions on Electron Devices . Nov2020, Vol. 67 Issue 11, p4958-4962. 5p. - Publication Year :
- 2020
-
Abstract
- In this work, we demonstrate an AlGaN-based deep-ultraviolet light-emitting diodes (DUV LEDs) structure with the incorporation of inverted-V-shaped quantum barriers (QBs). Intriguingly, the light output power (LOP) can be remarkably boosted by 157% in comparison with conventional structure with flat QBs, attributing to the successful enhancement of both electron-blocking capability and hole injection efficiency. More importantly, the device with inverted-V-shaped QBs can greatly accelerate the radiative recombination efficiency, alleviating the efficiency droop to only 3% while this number is as high at 47.1% in conventional DUV LED with flat QBs. [ABSTRACT FROM AUTHOR]
- Subjects :
- *WIDE gap semiconductors
*ALUMINUM gallium nitride
Subjects
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 67
- Issue :
- 11
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 147319757
- Full Text :
- https://doi.org/10.1109/TED.2020.3025523