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Performance Modulation in All-Solution-Driven InCaOₓ/HfGdOₓ Thin-Film Transistors and Exploration in Low-Voltage-Operated Logic Circuits.
- Source :
-
IEEE Transactions on Electron Devices . Oct2020, Vol. 67 Issue 10, p4238-4244. 7p. - Publication Year :
- 2020
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Abstract
- In current work, InCaOx thin films with different Ca-doping concentrations were prepared via solution-processed method. A systematic investigation was conducted to reveal the variation in the physical properties of InCaOx thin films as a function of Ca-doping concentration by using various characteristic measurements. Results not only demonstrate that Ca-doping can change the optical properties, microstructure, and surface roughness of In2O3 thin films but also indicate that Ca-doping can effectively decrease oxygen vacancies in In2O3 thin films. By measuring the electrical properties of InCaOx/HfGdOx thin-film transistors (TFTs) at a low operating voltage of 5 V, it is noteworthy that Ca-doping can improve the deteriorated performance of In2O3/HfGdOx TFT caused by excessive oxygen vacancies. As Ca-doping concentration reaches 0.5%, InCaOx/HfGdOx TFT manifests superior performances, including a larger μFE of 15.1 cm2V−1s−1 and a higher ION/IOFF of 2.3 × 1/2 107. Furthermore, the stability of In2O3/HfGdOx TFTs under positive bias stress is improved after Ca-doping. Finally, an inverter with a high gain of 6.0 is assembled on the basis of InCaOx/HfGdOx TFT. More importantly, these excellent performances of InCaOx/HfGdOx TFTs are achieved at a low operating voltage, which marks a giant step toward the achievement of low cost and low power consumption electrical devices. [ABSTRACT FROM AUTHOR]
- Subjects :
- *LOGIC circuits
*TRANSISTORS
*THIN films
*THIN film transistors
*SURFACE roughness
Subjects
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 67
- Issue :
- 10
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 147319563
- Full Text :
- https://doi.org/10.1109/TED.2020.3012592