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Fabrication and Characterization of Molybdenum Thin-Film Resistor for Superconducting Quantum Devices.

Authors :
Liang, Tiantian
Zhang, Guofeng
Wu, Wentao
Wang, Yongliang
Zhang, Lu
Jin, Hua
Zhang, Xue
Ying, Liliang
Gao, Bo
Source :
IEEE Transactions on Applied Superconductivity. Oct2020, Vol. 30 Issue 7, p1-4. 4p.
Publication Year :
2020

Abstract

As part of the efforts to establish a reliable fabrication process of superconducting integrated circuits at Center for Excellence in Superconducting Electronics (CENSE) in China, we investigated the influences of various deposition conditions on the properties of molybdenum (Mo) thin films. Thin-film resistors were fabricated based on these films by using a lift-off process. It was found that Mo structures made from films peeled off easily from the substrate after lift-off. We have optimized the deposition conditions to grow Mo films with compressive or weakly tensile stress. Mo thin-film resistors with a sheet resistance of several ohm/square and surface roughness of less than 1 nm were successfully fabricated and were used in the fabrication of superconducting quantum interference devices and small-scale superconducting integrated circuits. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
10518223
Volume :
30
Issue :
7
Database :
Academic Search Index
Journal :
IEEE Transactions on Applied Superconductivity
Publication Type :
Academic Journal
Accession number :
147319413
Full Text :
https://doi.org/10.1109/TASC.2020.3016423