Annealed n-TiO2/In2O3 nanowire metal-insulator-semiconductor for highly photosensitive low-noise ultraviolet photodetector.

Superior performance by annealed TiO 2 /In 2 O 3 nanowire (NW) metal-insulator-semiconductor device, synthesized using electron beam evaporation incorporating catalytic free glancing angle deposition technique. TiO 2 /In 2 O 3 NW annealed at 600 °C showed 15,000 times photosensitivity enhancement under wavelength 330 nm illumination at −5 V as compared to as-deposited TiO 2 /In 2 O 3 NW. TiO 2 /In 2 O 3 NW annealed at 600 °C exhibits high responsivity and quantum efficiency of 325 A/W and 1,20,000 respectively at 330 nm. Further, it exhibited low noise-equivalent power of 9.62 × 10−17 W and high detectivity of 2.91 × 1016 Jones with fast photoresponse speed of 0.2622 s and 0.1334 s rise and fall time respectively. This superlative performance of TiO 2 /In 2 O 3 NW heterostructure annealed at 600 °C gives the path for proficient optoelectronics UV photodetection applications. • Succesfully synthesized TiO 2 /In 2 O 3 nanowire (NW) device using e-beam evaporator with glancing angle deposition technique and annealed at various temperature. • 15,000 times enhanced photosensitivity by TiO 2 /In 2 O 3 NW annealed at 600 °C at 330 nm. • High responsivity and quantum efficiency of 325 A/W and 1,20,000 respectively at 330 nm by samples annealed at 600 °C. • Improved noise-equivalent power and detectivity by TiO 2 /In 2 O 3 nanowire annealed at 600 °C. [ABSTRACT FROM AUTHOR]