Formation processes of additional charge carriers in nanosilicon under the influence of epithermal neutrons.

Authors :: Garibli, A. A.
Garibov, A. A.
Source :: International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics. 10/30/2020, Vol. 34 Issue 27, pN.PAG-N.PAG. 9p.
Publication Year :: 2020
Abstract: The nuclear transmutation in the nanosilicon under the influence of epithermal neutrons and the formation processes of charge carriers under the influence of gamma and beta rays emitted by unstable nuclei were theoretically and experimentally investigated. These studies may provide information on the origin and number of electroactive defects in neutron-irradiated nanosilicon. [ABSTRACT FROM AUTHOR]

Subjects :: *CHARGE carriers
*NUCLEAR reactions
*BETA rays
*NEUTRONS
*GAMMA rays

Language :: English
ISSN :: 02179792
Volume :: 34
Issue :: 27
Database :: Academic Search Index
Journal :: International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics
Publication Type :: Academic Journal
Accession number :: 147067076
Full Text :: https://doi.org/10.1142/S021797922050246X

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