Fully epitaxial giant magnetoresistive devices with half-metallic Heusler alloy fabricated on poly-crystalline electrode using three-dimensional integration technology.

MLA

Chen, Jiamin, et al. “Fully Epitaxial Giant Magnetoresistive Devices with Half-Metallic Heusler Alloy Fabricated on Poly-Crystalline Electrode Using Three-Dimensional Integration Technology.” Acta Materialia, vol. 200, Nov. 2020, pp. 1038–45. EBSCOhost, https://doi.org/10.1016/j.actamat.2020.04.002.

APA

Chen, J., Sakuraba, Y., Yakushiji, K., Kurashima, Y., Watanabe, N., Liu, J., Li, S., Fukushima, A., Takagi, H., Kikuchi, K., Yuasa, S., & Hono, K. (2020). Fully epitaxial giant magnetoresistive devices with half-metallic Heusler alloy fabricated on poly-crystalline electrode using three-dimensional integration technology. Acta Materialia, 200, 1038–1045. https://doi.org/10.1016/j.actamat.2020.04.002

Chicago

Chen, Jiamin, Yuya Sakuraba, Kay Yakushiji, Yuichi Kurashima, Naoya Watanabe, Jun Liu, Songtian Li, et al. 2020. “Fully Epitaxial Giant Magnetoresistive Devices with Half-Metallic Heusler Alloy Fabricated on Poly-Crystalline Electrode Using Three-Dimensional Integration Technology.” Acta Materialia 200 (November): 1038–45. doi:10.1016/j.actamat.2020.04.002.