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A Thalamic Orphan Receptor Drives Variability in Short-Term Memory.
- Source :
-
Cell . Oct2020, Vol. 183 Issue 2, p522-522. 1p. - Publication Year :
- 2020
-
Abstract
- Working memory is a form of short-term memory that involves maintaining and updating task-relevant information toward goal-directed pursuits. Classical models posit persistent activity in prefrontal cortex (PFC) as a primary neural correlate, but emerging views suggest additional mechanisms may exist. We screened ∼200 genetically diverse mice on a working memory task and identified a genetic locus on chromosome 5 that contributes to a substantial proportion (17%) of the phenotypic variance. Within the locus, we identified a gene encoding an orphan G-protein-coupled receptor, Gpr12 , which is sufficient to drive substantial and bidirectional changes in working memory. Molecular, cellular, and imaging studies revealed that Gpr12 enables high thalamus-PFC synchrony to support memory maintenance and choice accuracy. These findings identify an orphan receptor as a potent modifier of short-term memory and supplement classical PFC-based models with an emerging thalamus-centric framework for the mechanistic understanding of working memory. • Genetic mapping in outbred mice identifies a locus (Smart1) for short-term memory • Thalamic transcriptome stratifies Smart1 haplotypes into high and low performers • Within the Smart1 locus, an orphan GPCR is a potent modifier of short-term memory • Brain recordings reveal Gpr12-driven thalamocortical functions in short-term memory A modifier of short-term memory, the orphan receptor Gpr12 is identified using genetic mapping in outbred mice and characterized to reveal that it enables thalamus-PFC synchrony to support memory maintenance and choice accuracy. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00928674
- Volume :
- 183
- Issue :
- 2
- Database :
- Academic Search Index
- Journal :
- Cell
- Publication Type :
- Academic Journal
- Accession number :
- 146412980
- Full Text :
- https://doi.org/10.1016/j.cell.2020.09.011