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Cathodoluminescence nano-characterization of individual GaN/AlN quantum disks embedded in nanowires.
- Source :
-
Applied Physics Letters . 9/28/2020, Vol. 117 Issue 13, p1-5. 5p. - Publication Year :
- 2020
-
Abstract
- AlN/GaN/AlN quantum disks (Q-disks) embedded in self-assembled hexagonally shaped GaN nanowires have been grown on the Si (111) substrate by plasma-assisted molecular beam epitaxy. To correlate the structural and optical properties of individual Q-disks inside the nanowire, highly spatially resolved cathodoluminescence (CL) spectroscopy in a scanning transmission electron microscope has been performed at 18 K. CL spectrum linescans along a single nanowire clearly identify the emission from the GaN base around 354 nm as well as two recombination channels at 347 nm and 330 nm directly correlated with the AlN/GaN/AlN Q-disk. A detailed characterization of these individual quantum objects is presented. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 117
- Issue :
- 13
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 146194870
- Full Text :
- https://doi.org/10.1063/5.0024110