Sensitive-Volume Model of Single-Event Latchup for a 180-nm SRAM Test Structure.

MLA

Wang, Peng, et al. “Sensitive-Volume Model of Single-Event Latchup for a 180-Nm SRAM Test Structure.” IEEE Transactions on Nuclear Science, vol. 67, no. 9, Sept. 2020, pp. 2015–20. EBSCOhost, https://doi.org/10.1109/TNS.2020.2996080.

APA

Wang, P., Sternberg, A. L., Sierawski, B. D., Zhang, E. X., Warren, K. M., Tonigan, A. M., Brewer, R. M., Dodds, N. A., Vizkelethy, G., Jordan, S. L., Fleetwood, D. M., Reed, R. A., & Schrimpf, R. D. (2020). Sensitive-Volume Model of Single-Event Latchup for a 180-nm SRAM Test Structure. IEEE Transactions on Nuclear Science, 67(9), 2015–2020. https://doi.org/10.1109/TNS.2020.2996080

Chicago

Wang, Peng, Andrew L. Sternberg, Brian D. Sierawski, En Xia Zhang, Kevin M. Warren, Andrew M. Tonigan, Rachel M. Brewer, et al. 2020. “Sensitive-Volume Model of Single-Event Latchup for a 180-Nm SRAM Test Structure.” IEEE Transactions on Nuclear Science 67 (9): 2015–20. doi:10.1109/TNS.2020.2996080.