The Effect of the Growth Temperature on the Passivating Properties of the Al2O3 Films Formed by Atomic Layer Deposition on the CdHgTe Surface.

We report an experimental study of the electrical properties of the interface between the Al2O3 passivating coating grown by plasma enhanced atomic layer deposition at different temperatures and the p-CdHgTe (xCdTe = 0.22) coating grown by molecular beam epitaxy via measuring the C–V characteristics of MIS structures. It has been established that, at an Al2O3 growth temperature of 200°C, the concentration of acceptors in CdHgTe increases due to dissociation and, at a temperature of 80°C, the spread of the insulator capacitance and built-in charge increases. The optimum temperature for growing the passivating Al2O3 coating on CdHgTe lies in the range of 120–160°C. [ABSTRACT FROM AUTHOR]