Selective H2 sensing using lanthanum doped zinc oxide thin film: A study of temperature dependence H2 sensing effect on carrier reversal activity.

MLA

Ghosh, Abhishek, et al. “Selective H2 Sensing Using Lanthanum Doped Zinc Oxide Thin Film: A Study of Temperature Dependence H2 Sensing Effect on Carrier Reversal Activity.” Journal of Applied Physics, vol. 128, no. 9, Sept. 2020, pp. 1–11. EBSCOhost, https://doi.org/10.1063/5.0012788.

APA

Ghosh, A., Zhang, C., Ju, S., & Zhang, H. (2020). Selective H2 sensing using lanthanum doped zinc oxide thin film: A study of temperature dependence H2 sensing effect on carrier reversal activity. Journal of Applied Physics, 128(9), 1–11. https://doi.org/10.1063/5.0012788

Chicago

Ghosh, Abhishek, Chen Zhang, Shuai Ju, and Haifeng Zhang. 2020. “Selective H2 Sensing Using Lanthanum Doped Zinc Oxide Thin Film: A Study of Temperature Dependence H2 Sensing Effect on Carrier Reversal Activity.” Journal of Applied Physics 128 (9): 1–11. doi:10.1063/5.0012788.