Signature of p-type semiconductor features in paper-based back gate metal-organic framework thin-film transistors.

A kind of continuous flexible paper substrate thin film transistors (TFTs) of the ratio of a controllable length to width nickel (Ni) two-dimensionally connected metal-organic frameworks, Ni-TCNQ (TCNQ = 7, 7, 8, 8-tetracyanoquinodimethane), has been prepared skillfully by using all ink-jet printing Ni(NO3)2·6H2O and the TCNQ hydrothermal interface in situ reaction method. The structure analysis of Ni-TCNQ on copper electrodes was revealed by combining transmission electron microscope and powder x-ray diffraction techniques, indicating that it has a lamellar and porous structure. The morphology and structure of the transistor channel are stacked up by nanosheets of 2D lattice of [Ni(C12H4N4)2]n, which is further verified by scanning electron microscope, FT-IR, and x-ray photoelectron spectroscopy. I–V characteristics show that electrical behaviors of the p-type junctionless TFT are fabricated at room temperature. [ABSTRACT FROM AUTHOR]