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Wide-bandgap high-mobility ZnO thin-film transistors produced at room temperature.
- Source :
-
Applied Physics Letters . 9/27/2004, Vol. 85 Issue 13, p2541-2543. 3p. 4 Graphs. - Publication Year :
- 2004
-
Abstract
- We report high-perfomance ZnO thin-film transistor (ZnO-TFT) fabricated by rf magnetron sputtering at room temperature with a bottom gate configuration. The ZnO-TFT operates in the enhancement mode with a threshold voltage of 19 V, a saturation mobility of 27 cm2/V s, a gate voltage swing of 1.39 V/decade and an on/off ratio of 3 × 105. The ZnO-TFT presents an average optical transmission (including the glass substrate) of 80% in the visible part of the spectrum. The combination o f transparency, high mobility, and room-temperature processing makes the ZnO-TFT a very promising low-cost optoelectronic device for the next generation of invisible and flexible electronics. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 85
- Issue :
- 13
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 14546608
- Full Text :
- https://doi.org/10.1063/1.1790587