Tuning electronic transport properties of wide antimonene nanoribbon via edge hydrogenation and oxidation.

In this paper, we study the electronic structures and electronic transport properties of wide buckled and puckered antimonene nanoribbions (SbNRs) via edge hydrogenation and oxidation by using a first principle method. The calculated results show that the edge passivations play an important role in the band structures of wide buckled and puckered SbNRs. The current-voltage characteristics of buckled and puckered SbNRs consistent with their band structures. The currents of buckled and puckered SbNR devices via edge hydrogenation are nearly zero at low bias region, but the edge oxidation can enlarge the device's conductance obviously. More importantly, the tunable negative differential resistance behavior can be found in the buckled and puckered SbNR devices via edge oxidation. Our researches are of great significance for the subsequent application of SbNR devices. [ABSTRACT FROM AUTHOR]