Double pentavalent (Sb5+, Nb5+) and trivalent (Sm3+, Y3+) co-doped Ti0.9Zr0.1O2 colossal dielectric permittivity multilayer ceramics for the miniaturization of the next-generation electronics.

Materials with colossal dielectric permittivity (CP) are in the focus of interest for the development of miniaturization and integration of electronic components. Despite the extensive study of these new classes of co-doped TiO 2 CP materials, the preparation of multilayer ceramics using this kind of CP materials is still challenging work. Here, we synthesize a series of (Sb5+, Nb5+) and (Sm3+, Y3+) co-doped Ti 0.9 Zr 0.1 O 2 ceramics (SNSYTZO) through the conventional solid-state reaction method. XRD spectrum identifies that ceramics under x = 0.04 show a perfect rutile phase with the tetragonal crystal structure; however, minor brookite orthorhombic crystal structure appears when x > 0.04. FESEM images show the prepared ceramics have excellent densification and low porosity. Dielectric, modulus, and impedance spectrum are systematically explored the underlying CP mechanism and compared with each other to find the optimal materials composition to prepare further multilayer ceramics, which is fabricated by the industrial tape casting method. FESEM, together with surface element mapping, indicates that all doping elements are homogeneously distributed. Also, we investigate the dielectric response without/with DC bias. This work sheds light on a promising feasible route to prepare the miniaturization of the next-generation electronics via a large scale industrial tape casting method. [ABSTRACT FROM AUTHOR]