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A comprehensive solution for modeling moisture induced delamination in electronic packaging during solder reflow.

Authors :
Wang, Jing
Niu, Yuling
Shao, Shuai
Wang, Huayan
Xu, Jiefeng
Pham, Vanlai
Park, Seungbae
Source :
Microelectronics Reliability. Sep2020, Vol. 112, pN.PAG-N.PAG. 1p.
Publication Year :
2020

Abstract

Moisture induced failure is one of the major reliability concerns in electronic packaging. This research provides a comprehensive solution for modeling the moisture induced delamination in electronic packaging during solder reflow. Existing finite element approaches of studying the moisture and vapor pressure induced package delamination issue were discussed, reviewed, summarized and integrated into a systematic approach. This study covered multiple related topics, including diffusion modeling techniques under dynamic thermal loading conditions, fracture mechanics modeling methods for bi-material cracks, and methodologies of applying integrated hygro-thermal-vapor loading conditions. A novel analogy was proposed for applying the combined hygro-thermal-vapor loading in modeling the moisture induced package delamination, which could reduce the users' effort in dealing with the multiple-loading boundary conditions in the fracture mechanics finite element simulation. In the end, the comprehensive finite element approach introduced in this study was implemented to model the moisture induced delamination in a stacked die package during solder reflow. • A comprehensive finite element method for simulating moisture induced delamination in electronic packaging was introduced. • A novel analogy was proposed for applying the combined hygro-thermal-vapor loading conditions in finite element modeling. • Moisture diffusion and delamination behavior of a stacked die package during solder reflow was studied by FEA. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00262714
Volume :
112
Database :
Academic Search Index
Journal :
Microelectronics Reliability
Publication Type :
Academic Journal
Accession number :
145136669
Full Text :
https://doi.org/10.1016/j.microrel.2020.113791