Mechanisms of Asymmetrical Turn-On and Turn-Off and the Origin of Dynamic CGD Hysteresis for Hard-Switching Superjunction MOSFETs.

The dV/dt in superjunction metal–oxide–semiconductor field-effect transistors (MOSFETs) during the turn-off transient has been shown to be higher than during the turn-on, which can be attributed to a shorter Miller plateau. In this article, we will show that these asymmetrical turn-on and turn-off characteristics are indirectly detected by the hysteresis of the dynamic gate-to-drain capacitance, CGD. Moreover, this article reveals the mechanisms behind the asymmetrical switching and the origin of the hysteresis, which have been shown to be caused by the difference in the CGD displacement current paths for the turn-off and the turn-on. [ABSTRACT FROM AUTHOR]