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Analytical investigation of activation energy for Mg-doped p-AlGaN.
- Source :
-
Optical & Quantum Electronics . Jul2020, Vol. 52 Issue 7, p1-10. 10p. - Publication Year :
- 2020
-
Abstract
- An analytical model has been developed to investigate the activation energy profile in Mg-doped p-AlxGa1−xN alloy for the entire range of Al composition. For any Al content, the calculated activation energy quantitatively shows a good agreement with experimental result which has also been confirmed by both Hydrogen atom model and effective Bohr radius model. Through this empirical analysis, a breakthrough is apparent for the hole concentration and sheet resistivity with particular Al concentration. It is found that the hole concentration is < 1017 cm−3 while the Al content, x > 30% in p-AlxGa1-xN. Moreover, the sheet resistivity is found to be < 1 Ω-cm up to the Al content of 30%. Finally, the temperature-induced changing behavior of hole concentration and sheet resistivity have been explored here. These results could be a good insight for fabricating the AlGaN-based real-world devices for future optoelectronics. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 03068919
- Volume :
- 52
- Issue :
- 7
- Database :
- Academic Search Index
- Journal :
- Optical & Quantum Electronics
- Publication Type :
- Academic Journal
- Accession number :
- 144921990
- Full Text :
- https://doi.org/10.1007/s11082-020-02462-x