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A Modified Lucky Electron Model for Impact Ionization Rate in NMOSFET's at 77 K.
- Source :
-
IEEE Transactions on Electron Devices . Jan99, Vol. 46 Issue 1, p263. 4p. 1 Chart, 3 Graphs. - Publication Year :
- 1999
-
Abstract
- Deals with a study which focused on a modified lucky electron model that describe the impact ionization at 77 K in N-metal-oxide semiconductor field-effect transistors (NMOSFET). Experimental details; Results and discussion; Conclusions.
- Subjects :
- *ELECTRONS
*METAL oxide semiconductor field-effect transistors
Subjects
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 46
- Issue :
- 1
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 1447994
- Full Text :
- https://doi.org/10.1109/16.737470