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Evolving magneto-electric device technologies.
- Source :
-
Semiconductor Science & Technology . Jul2020, Vol. 35 Issue 7, p1-22. 22p. - Publication Year :
- 2020
-
Abstract
- Here, several classes of magneto-electric devices, and their possible implementations as complementary metal-oxide-semiconductor (CMOS) replacements, are discussed. We consider how these devices can provide considerable improvements in functionality over CMOS when employed in novel circuit architectures. In the context of the magneto-electric device technologies discussed here, we detail the expansion of benchmarking into some of the newer beyond-CMOS technologies. This has required circuit level simulations, using Cadence Spectre or Spice, and Verilog-A based models of the magneto-electric magnetic tunnel junction devices have been used for circuit validation. This has been done as part of a global effort to develop comparative benchmarking standards across logic families, even as new benchmarking methodologies are being developed, while maintaining the familiar CMOS benchmarks. [ABSTRACT FROM AUTHOR]
- Subjects :
- *MAGNETIC tunnelling
Subjects
Details
- Language :
- English
- ISSN :
- 02681242
- Volume :
- 35
- Issue :
- 7
- Database :
- Academic Search Index
- Journal :
- Semiconductor Science & Technology
- Publication Type :
- Academic Journal
- Accession number :
- 144665756
- Full Text :
- https://doi.org/10.1088/1361-6641/ab8438