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Evolving magneto-electric device technologies.

Authors :
Sharma, N
Bird, J P
Binek, Ch
Dowben, P A
Nikonov, D
Marshall, A
Source :
Semiconductor Science & Technology. Jul2020, Vol. 35 Issue 7, p1-22. 22p.
Publication Year :
2020

Abstract

Here, several classes of magneto-electric devices, and their possible implementations as complementary metal-oxide-semiconductor (CMOS) replacements, are discussed. We consider how these devices can provide considerable improvements in functionality over CMOS when employed in novel circuit architectures. In the context of the magneto-electric device technologies discussed here, we detail the expansion of benchmarking into some of the newer beyond-CMOS technologies. This has required circuit level simulations, using Cadence Spectre or Spice, and Verilog-A based models of the magneto-electric magnetic tunnel junction devices have been used for circuit validation. This has been done as part of a global effort to develop comparative benchmarking standards across logic families, even as new benchmarking methodologies are being developed, while maintaining the familiar CMOS benchmarks. [ABSTRACT FROM AUTHOR]

Subjects

Subjects :
*MAGNETIC tunnelling

Details

Language :
English
ISSN :
02681242
Volume :
35
Issue :
7
Database :
Academic Search Index
Journal :
Semiconductor Science & Technology
Publication Type :
Academic Journal
Accession number :
144665756
Full Text :
https://doi.org/10.1088/1361-6641/ab8438