Single crystalline β-Ga2O3 homoepitaxial films grown by MOCVD.

β gallium oxide (β-Ga 2 O 3) homoepitaxy films were grown on (2 ‾ 01) β-Ga 2 O 3 substrates by metal organic chemical vapor deposition (MOCVD). The effect of growth temperature on the crystalline quality was measured and systematically analyzed. The results showed the growth temperature played an important role in crystalline quality of β-Ga 2 O 3. The optimized single crystalline β-Ga 2 O 3 film was grown at 750 °C, and the full width at half maximum (FWHM) of X-ray diffraction (XRD) rocking curve was 21.6 arcsec, smaller than that of the β-Ga 2 O 3 substrate (26.3 arcsec). The film exhibited a greatly smooth surface and the root-mean-square (RMS) roughness was 0.68 nm. And the arrangement of atoms inside the film was in good accordance with lattice constants of β-Ga 2 O 3. In addition, the effect of the band structure on the luminescent properties of β-Ga 2 O 3 was discussed. • The crystalline quality of the optimized film was superior to that of the substrate. • Atomic arrangement inside the β-Ga 2 O 3 films was displayed. • The effect of band structure on the luminescent properties of β-Ga 2 O 3 was discussed. [ABSTRACT FROM AUTHOR]