Crystalline Bi2Se3 topological insulator films prepared by dc magnetron sputtering.

Topological insulator thin films of Bi 2 Se 3 have been deposited on SrTiO 3 (111) substrate by dc magnetron sputtering and annealed in Se environment. X-ray Diffraction (XRD) measurement shows (00 l) (l = 3n, where n is an integer) type of reflections over 2θ range of 10–80° without any other peaks indicating that the films are of single crystalline quality along the [001] growth direction confirming that highly c-axis-preferred orientated Bi 2 Se 3 thin films can be obtained by relatively simpler and easily scalable dc magnetron sputtering technique. The results are also confirmed by Field Emission Scanning Electron Microscopy (FESEM), Energy Dispersive X-ray Spectroscopy (EDXS), Photo-electron Spectroscopy (PES) and X-ray absorption spectroscopy (XAS) measurements. • Bi 2 Se 3 films have been prepared on SrTiO 3 substrates by dc magnetron sputtering. • Films prepared at higher substrate temperature followed by annealing under Se ambient. • As-deposited and annealed films were characterized by XRD, XAS and PES. • Annealed samples show perfect stiochiometry and better c-axis orientation. • Annealed samples show enhanced presence of states near Fermi edge. [ABSTRACT FROM AUTHOR]