Back to Search
Start Over
Terahertz Frequency Comb in Graphene Field-Effect Transistors.
- Source :
-
EPJ Web of Conferences . 4/16/2020, Vol. 233, p1-5. 5p. - Publication Year :
- 2020
-
Abstract
- Graphene Field-effect transistors (GFETs) are excellent candidates for all-electric, low-power radiation sources and detectors based on integrated circuit technology. In this work, we show that a hydrodynamic instability can be ex¬plored (the Dyakonov–Shur instability) to excite the graphene plasmons. The instability can be sustained with the help of a source-to-drain current and con¬trolled with the gate voltage. It is shown that the plasmons radiate a frequency comb in the Terahertz (THz) range. It is argued how this can pave the stage for a new generation of low power THz sources in integrated-circuit technology. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 21016275
- Volume :
- 233
- Database :
- Academic Search Index
- Journal :
- EPJ Web of Conferences
- Publication Type :
- Conference
- Accession number :
- 143382741
- Full Text :
- https://doi.org/10.1051/epjconf/202023303006