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Terahertz Frequency Comb in Graphene Field-Effect Transistors.

Authors :
Almeida, B.G.
Agostinho Moreira, J.
Cosme, Pedro
Source :
EPJ Web of Conferences. 4/16/2020, Vol. 233, p1-5. 5p.
Publication Year :
2020

Abstract

Graphene Field-effect transistors (GFETs) are excellent candidates for all-electric, low-power radiation sources and detectors based on integrated circuit technology. In this work, we show that a hydrodynamic instability can be ex¬plored (the Dyakonov–Shur instability) to excite the graphene plasmons. The instability can be sustained with the help of a source-to-drain current and con¬trolled with the gate voltage. It is shown that the plasmons radiate a frequency comb in the Terahertz (THz) range. It is argued how this can pave the stage for a new generation of low power THz sources in integrated-circuit technology. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
21016275
Volume :
233
Database :
Academic Search Index
Journal :
EPJ Web of Conferences
Publication Type :
Conference
Accession number :
143382741
Full Text :
https://doi.org/10.1051/epjconf/202023303006