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Threshold MnAs thickness for the formation of ordered α/β stripes in MnAs/GaAs(001).
- Source :
-
Journal of Physics D: Applied Physics . 6/24/2020, Vol. 53 Issue 26, p1-9. 9p. - Publication Year :
- 2020
-
Abstract
- Manganese arsenide layers epitaxially grown on GaAs(001) are known to feature a temperature dependent self-assembled microstructure of ordered stripes, alternating the ferromagnetic α and paramagnetic β phases. The surface dipolar fields generated by the α/β stripes have been used for achieving temperature controlled magnetization switching of a ferromagnetic overlayer. For this kind of application, it is advantageous to minimize the MnAs layer thickness. In this work we investigate, using x-ray scattering techniques, the presence of the ordered microstructure as a function of the MnAs layer thickness and we identify a minimum value of ∼40 nm for the formation of ordered α/β stripes in MnAs/GaAs(001). These results have an impact for envisaging magnetization-switching applications that rely on the control of the temperature—or laser-driven surface dipolar fields in MnAs-based devices. [ABSTRACT FROM AUTHOR]
- Subjects :
- *AUDITING standards
*STRIPES
*X-ray scattering
*MANGANESE
Subjects
Details
- Language :
- English
- ISSN :
- 00223727
- Volume :
- 53
- Issue :
- 26
- Database :
- Academic Search Index
- Journal :
- Journal of Physics D: Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 143366058
- Full Text :
- https://doi.org/10.1088/1361-6463/ab82da