GaN-on-SiC is Driving Advances in Radar Applications.

The article focuses on the radar systems have had short pulse widths, narrow instantaneous bandwidths and relatively small duty cycles. It mentions that mature gallium arsenide (GaAs) high electron mobility transistor (HEMT) technologies can support the bandwidth and the higher frequency bands; and also mentions with the higher power density, matching circuit combining structures are simpler and lower loss vs. GaAs HEMT.