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Formation of waveguides by implantation of 3.0 MeV Ni2+.
- Source :
-
Journal of Applied Physics . 9/15/2004, Vol. 96 Issue 6, p3463-3466. 4p. 1 Chart, 5 Graphs. - Publication Year :
- 2004
-
Abstract
- 3.0 MeV Ni2+ in the beam doses from 1×1013 to 9×1014 ions/cm2 are implanted into LiNbO3 single crystals at room temperature. After 300 °C annealing for 30 min in air ambient, dark mode measurement is done by the prism-coupling technique. Waveguides from both raised extraordinary index layer and barrier-confined are formed by low and high beam dose implantation, respectively. In the samples implanted by mediate beam doses, a phenomenon of “missing mode” is observed. The experimental results are analyzed and compared with the simulated results from a theoretical model, which is based on the assumption that the change of index induced by implantation is mainly governed by degradation of polarization and reduction of material density. With a fiber probe, the waveguide loss from single transverse magnetic mode is measured, which is about 3 dB/cm. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 96
- Issue :
- 6
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 14310177
- Full Text :
- https://doi.org/10.1063/1.1775296