Back to Search Start Over

Formation of waveguides by implantation of 3.0 MeV Ni2+.

Authors :
Fei Lua
Tingting Zhang
Xuelin Wang
Shiling Li
Keming Wang
Dingyu Shen
Hongji Ma
Source :
Journal of Applied Physics. 9/15/2004, Vol. 96 Issue 6, p3463-3466. 4p. 1 Chart, 5 Graphs.
Publication Year :
2004

Abstract

3.0 MeV Ni2+ in the beam doses from 1×1013 to 9×1014 ions/cm2 are implanted into LiNbO3 single crystals at room temperature. After 300 °C annealing for 30 min in air ambient, dark mode measurement is done by the prism-coupling technique. Waveguides from both raised extraordinary index layer and barrier-confined are formed by low and high beam dose implantation, respectively. In the samples implanted by mediate beam doses, a phenomenon of “missing mode” is observed. The experimental results are analyzed and compared with the simulated results from a theoretical model, which is based on the assumption that the change of index induced by implantation is mainly governed by degradation of polarization and reduction of material density. With a fiber probe, the waveguide loss from single transverse magnetic mode is measured, which is about 3 dB/cm. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00218979
Volume :
96
Issue :
6
Database :
Academic Search Index
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
14310177
Full Text :
https://doi.org/10.1063/1.1775296