Cite
Surface passivation of n-GaN by nitrided-thin-Ga2O3/SiO2 and Si3N4 films.
MLA
Bae, Choelhwyi, et al. “Surface Passivation of N-GaN by Nitrided-Thin-Ga2O3/SiO2 and Si3N4 Films.” Journal of Applied Physics, vol. 96, no. 5, Sept. 2004, pp. 2674–80. EBSCOhost, https://doi.org/10.1063/1.1772884.
APA
Bae, C., Krug, C., Lucovsky, G., Chakraborty, A., & Mishra, U. (2004). Surface passivation of n-GaN by nitrided-thin-Ga2O3/SiO2 and Si3N4 films. Journal of Applied Physics, 96(5), 2674–2680. https://doi.org/10.1063/1.1772884
Chicago
Bae, Choelhwyi, Cristiano Krug, Gerald Lucovsky, Arpan Chakraborty, and Umesh Mishra. 2004. “Surface Passivation of N-GaN by Nitrided-Thin-Ga2O3/SiO2 and Si3N4 Films.” Journal of Applied Physics 96 (5): 2674–80. doi:10.1063/1.1772884.