Tungsten co-doping effects on Ce:Gd3Ga3Al2O12 scintillator grown by the micro-pulling down method.

• W co-doped Ce:Gd 3 Ga 3 Al 2 O 12 with 30–60 mm length grown by micro-pulling down method. • Light yield value was increased by small amount (200–1000 ppm) of W co-doping. • When the co-doping concentration of W was higher than 1000 ppm, the light yield decreased. Single crystal scintillators are extensively used in various radiation detection applications and their scintillation performances can be improved via co-doping. Therefore, in this study, tungsten-ion co-doped Ce:Gd 3 (Ga,Al) 5 O 12 (Ce:GGAG) crystals were grown using the micro-pulling-down (μ-PD) method to investigate the effects of co-doping on their scintillation properties. The relationships between the W concentration, optical and luminescence properties, and radiation response of the W-co-doped Ce:GGAG crystals were evaluated. The W-co-doped Ce 0.5%:Gd 3 Ga 3 Al 2 O 12 single crystals of diameter 3 mm and length 30–60 mm were grown by the μ-PD method. The light yield increased at W concentrations of 200 and 500 ppm and decreased at W concentrations above 1000 ppm. There was no significant change in the fast decay component of scintillation. [ABSTRACT FROM AUTHOR]