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Excitonic signature in gain and carrier induced change of refractive index spectra of (In,Al)GaN quantum well lasers.
- Source :
-
Applied Physics Letters . 8/30/2004, Vol. 85 Issue 9, p1475-1477. 3p. 4 Graphs. - Publication Year :
- 2004
-
Abstract
- The exciton is observed in (In,Al)GaN laser diodes as resonance in the optical gain spectra and in the spectra of the carrier induced change of the refractive index. The observed instability of the exciton with respect to the free electron-hole plasma with increasing carrier densities is accompanied by a blueshift of the exciton resonance due to the quantum confined Stark shift. The experiments confirm central points of many-body simulations of InGaN/GaN quantum wells. The exciton becomes unstable near threshold and so lasing occurs from the electron–hole plasma. [ABSTRACT FROM AUTHOR]
- Subjects :
- *REFRACTIVE index
*LASERS
*DIODES
*RESONANCE
*QUANTUM theory
*EXCITON theory
*SOLIDS
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 85
- Issue :
- 9
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 14258822
- Full Text :
- https://doi.org/10.1063/1.1789243