Enhancement the Electrical Properties of Porous Silicon for Photo-detectors Applications by depositing Bi2O3 nanoparticles.

In this work, bismuth oxide nanoparticles (Bi 2 O 3 NPs) are preparation by laser ablation at diverse laser energy 200, 400, 600 and 800 mJ with 100 shots and laser wavelength 1064 nm then deposited on porous silicon (PS). X-ray diffraction (XRD) study revealed that Bi 2 O 3 NPs is crystalline and belong to α-phase with monoclinic symmetry. Atomic force microscope (AFM) study results for PS showed sponge like structure, and for Bi 2 O 3 NPs appears an average diameter of 31.09 nm coordinated in a rod-like shape, are watching and electrical properties are carried out to describe the samples. Fourier Transform Infrared (FTIR) spectra showed the oxidation of PS substrate resulting in the passivating of the surface states and for Bi 2 O 3 NPs/PS confirming the presence of Bi-O bond. The electrical properties such as barrier height (Φ B) and ideal factor (n) of the Al/PS/Si/Al and Al/Bi 2 O 3 NPs/PS/Si/Al heterojunction were calculated from the current–voltage (I-V) measurements. Finally, we appeared enhanced effectiveness of Bi 2 O 3 NPs/PS photodetectors through a wide domain of wavelengths. [ABSTRACT FROM AUTHOR]