Enhancement of photodetectors devices for silicon nanostructure from study effect of etching time by photoelectrochemical etching technique.

Porous silicon (PS) prepared from n-type silicon via photoelectrochemical etching (PECE) technique. The morphology properties of PS specimens that formed with different etching time has been study utilize Scanning electron microscopy (SEM) and it show that the Layer of pore has sponge like stricture and the average pore diameter of PS layer rising with increase etching time. The X-ray diffraction (XRD) pattern indicated the nanocrystaline of the specimens, during these results; we showed improve behavior of PS photodetectors on a range of wavelengths. [ABSTRACT FROM AUTHOR]