Calculation of impurity density and electron-spin relaxation times in p-type GaAs:Mn.

• Electron-spin relaxation times in 3D and 2D p-type GaAs were discussed. • Concentrations of deep and show impurities were calculated for prolonged electron spin relaxation times. • The concentration of shallow donors needs to exceed the concentration of the shallow acceptor. • The maximum spin relaxation times for the 2D and 3D materials are 77 ns and 154 ns, respectively. Magnetic semiconductors have aroused interest due to their various functionalities related to spintronic devices. Manganese (Mn) as a substitutional impurity in A 3 B 5 semiconductors supplies not only holes, but also localized spins. The ejection of Mn atoms with an uncompensated magnetic moment leads to the appearance of ferromagnetic properties. The most suitable material characterized by long-term spin dynamics is n-type GaAs. In p-type GaAs, the spin relaxation time of electrons is generally much shorter. For purposes of this research, electron-spin relaxation times in 3D and 2D p-type GaAs were studied. Calculation of impurity densities and charge state of magnetic acceptors demonstrate the essential composition of the material. Comparison of theoretical and experimental data in optical-spin orientation of electrons reveal the longest spin relaxation time of 77 ns in 2D GaAs:Mn, less than twice the best time in the p-type 3D GaAs material. [ABSTRACT FROM AUTHOR]