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Annealing effect on phase transition and thermochromic properties of VO2 thin films.

Authors :
Kumar, Manish
Singh, Jitendra Pal
Chae, Keun Hwa
Park, Jaehun
Lee, Hyun Hwi
Source :
Superlattices & Microstructures. Jan2020, Vol. 137, pN.PAG-N.PAG. 1p.
Publication Year :
2020

Abstract

Vanadium dioxide (VO 2) is one kind of desired thermochromic material for many smart devices because of its notable temperature-responsive infrared modulation and metal−insulator transition with underlying structural phase transition (SPT). Understanding on the tuning of these properties in an anticipated manner is essential to accomplish device realization. Here, we report the annealing time induced modifications in SPT and the thermochromic properties of VO 2 thin films. Using RF sputtering deposition, VO 2 thin films were grown at room temperature and their ex-situ annealing was carried out at 600 °C for different time from 2 min to 60 min. Structural, electronic and thermochromic properties of these films were investigated. VO 2 thin films samples annealed for longer time exhibit larger crystallite size, higher surface roughness and SPT temperature, and the reduced hysteresis width of SPT during heating and cooling cycle. X-ray absorption spectroscopy results indicate that the variation in the annealing time do not alter the electronic structure significantly. Nevertheless, VO 2 thin film samples with prolonged annealing display higher IR transmittance modulation across the SPT. • VO 2 thin films were stabilized by giving post deposition annealing treatment to room temperature deposited films. • Variation in annealing time modifies the structural phase transition of VO 2 thin films. • Thermochromic properties of VO 2 thin films were tailored by controlling the annealing time. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
07496036
Volume :
137
Database :
Academic Search Index
Journal :
Superlattices & Microstructures
Publication Type :
Academic Journal
Accession number :
142393768
Full Text :
https://doi.org/10.1016/j.spmi.2019.106335