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Positron Structural Analysis of ScN Films Deposited on MgO Substrate.
- Source :
-
Acta Physica Polonica: A . Feb2020, Vol. 137 Issue 2, p209-214. 6p. - Publication Year :
- 2020
-
Abstract
- Scandium nitride (ScN) is a semiconductor with a rocksalt-structure that has attracted attention for its potential applications in thermoelectric energy conversion devices, as a semiconducting component in epitaxial metal/semiconductor superlattices. Two ScN films of 118 nm and 950 nm thicknesses were deposited at the same conditions on MgO (001) substrate by reactive magnetron sputtering. Poly-orientation of films was observed with first an epitaxial growth on MgO and then a change in the orientation growth due to the decrease of the adatom mobility during the film growth. Positron lifetime measurements showed a high concentration of nitrogen vacancies in both films with a slightly higher concentration for the thicker ScN film. Presence of nitrogen vacancies explains the values of direct band gaps of 2:53±0:01 eV, and 2:56±0:01 eV which has been measured on ScN films of 118 nm and 950 nm thicknesses, respectively. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 05874246
- Volume :
- 137
- Issue :
- 2
- Database :
- Academic Search Index
- Journal :
- Acta Physica Polonica: A
- Publication Type :
- Academic Journal
- Accession number :
- 142366432
- Full Text :
- https://doi.org/10.12693/APhysPolA.137.209