Gas-Sensing Properties of Thin Films Grown on the Surface of InP Single Crystals by Thermal Oxidation.

Thin nanofilms have been grown on the surface of single-crystal InP wafers using PbO + V2O5 mixtures in the gas phase. The oxide mixtures used as chemical stimulators have been shown to accelerate the thermal oxidation of InP. The resultant films exhibit gas-sensing properties for ammonia (concentration of 140 ppm) and carbon monoxide (95 ppm). The highest gas sensitivity is near 1.2 arb. units, at temperatures in the range 200–240°C. [ABSTRACT FROM AUTHOR]