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A model of grain boundary complexion transitions and grain growth in Yttria-doped alumina.

Authors :
Goins, Philip E.
Frazier III, William E.
Source :
Acta Materialia. Apr2020, Vol. 188, p79-91. 13p.
Publication Year :
2020

Abstract

In this work, we present a physically-parameterized microstructure evolution model for the Yttria-doped alumina system. Yttria-doped alumina is a well-known ceramic system which undergoes first-order phase-like transitions at grain boundaries, which can radically alter interface properties. The change in interfacial properties in turn can radically change microstructure outcomes during processing, including the induction of abnormal grain growth modes. In this work, we develop a simulation that evolves alumina microstructure as a function of yttria concentration and temperature. In the window studied, we achieve strong agreement with reviewed experimental results in identifying the windows for large grains, small grains, abnormal grain growth, and complexion transition kinetics (as measured by JMAK analysis). We then apply the model to study and demonstrate how the possible inclusion of second-phase particles or uneven solute distribution profiles will impact microstructure evolution. It is found that particles do not significantly affect abnormal grain growth in the window studied (but do lead to reduced grain size through pinning effects). It is found that even modest amounts of solute inhomogeneity will result in substantial changes in microstructure outcomes, frequently leading to clusters of abnormal grains. This model largely corroborates the expectations and hypotheses made from recent experimental studies in oxide-doped alumina systems. Further, it is found that there exists a peak transition fraction for the system at which abnormal grain size tends to be maximized. Image, graphical abstract [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
13596454
Volume :
188
Database :
Academic Search Index
Journal :
Acta Materialia
Publication Type :
Academic Journal
Accession number :
142297268
Full Text :
https://doi.org/10.1016/j.actamat.2019.12.061