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Arayüzey Doğal Oksit Tabakalı Al/p-Si/Al Yapıların Dielektrik Karakteristiklerine Ölçüm Frekansının Etkileri.
- Source :
-
Journal of the Institute of Science & Technology / Iğdır Üniversitesi Fen Bilimleri Enstitüsü Dergisi . Mar2020, Vol. 10 Issue 1, p91-100. 10p. - Publication Year :
- 2020
-
Abstract
- Al/p-Si/Al metal/oxide layer/semiconductor or so-called metal/insulating layer/semiconductor (MIS) structures with interfacial native oxide layer are experimentally determined. For this structure, p-Si semiconductor with 1-10 Ω-cm resistivity was used as base material. The native oxide SiO2 layer was formed on the front polished surface the p-Si wafer in the laboratory environment. In order to obtain diode parameters, it was determined the experimental frequency admittance characteristics of the Al/p-Si MIS structure from commonly used capacitance-voltage (C-V) conductance-voltage (G-V) measurements at different frequencies, and parameters such as the real 𝜀′ and imaginary dielectric 𝜀′′ constant, loss-tangent (𝜀′′/𝜀′), real 𝑀′ and imaginary electrical modulus 𝑀′′ and ac conductivity σac were calculated and interpreted. [ABSTRACT FROM AUTHOR]
Details
- Language :
- Turkish
- ISSN :
- 21460574
- Volume :
- 10
- Issue :
- 1
- Database :
- Academic Search Index
- Journal :
- Journal of the Institute of Science & Technology / Iğdır Üniversitesi Fen Bilimleri Enstitüsü Dergisi
- Publication Type :
- Academic Journal
- Accession number :
- 141908165
- Full Text :
- https://doi.org/10.21597/jist.612518