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Preparation GaxMn1-xN DMS materials using HVPE method
- Source :
-
Journal of Crystal Growth . Sep2004, Vol. 269 Issue 2-4, p270-275. 6p. - Publication Year :
- 2004
-
Abstract
- Mn-doped films were grown in an ammonia-source HVPE system. Mn3GaN0.5 and GaN were detected in film samples without other phase when the HCl–Mn/NH3 ratio range from <f>1/200</f> to <f>1/100</f>. (GaxMn1-x)N phase also formed in films. Two broad bands centered at 305 and 674 cm-1and new peaks at wave numbers of 592 cm-1arised in Raman spectra of Mn-doped films. It was also found that A1(LO) modes of all Mn-doped samples were strongly asymmetric and showed a considerable redshift. Mn-doped films showed an obvious hysteresis loops at room temperature. Mn-doped films showed metallic characteristic and this mixed structure may be greatly beneficial to spin injection magnetotransport devices. [Copyright &y& Elsevier]
- Subjects :
- *RAMAN effect
*CRYSTAL growth
*SPECTRUM analysis
*HYSTERESIS loop
Subjects
Details
- Language :
- English
- ISSN :
- 00220248
- Volume :
- 269
- Issue :
- 2-4
- Database :
- Academic Search Index
- Journal :
- Journal of Crystal Growth
- Publication Type :
- Academic Journal
- Accession number :
- 14188030
- Full Text :
- https://doi.org/10.1016/j.jcrysgro.2004.05.086